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BDX53BFP Scheda tecnica(PDF) 1 Page - STMicroelectronics |
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BDX53BFP Scheda tecnica(HTML) 1 Page - STMicroelectronics |
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1 / 4 page ![]() BDX53BFP SILICON POWER DARLINGTON TRANSISTOR APPLICATIONS: s GENERAL PURPOSE SWITCHING AND AMPLIFIER s LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT s FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING DESCRIPTION The BDX53BFP is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration mounted in T0-220FP fully molded isolated package. It is intented for use in hammer drivers, audio amplifiers and other medium power linear and switching applications. INTERNAL SCHEMATIC DIAGRAM February 2003 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-Base Voltage (IE = 0) 80 V VCEO Collector-Emitter Voltage (IB = 0) 80 V VEBO Emitter-base Voltage (IC = 0) 5 V IC Collector Current 8 A ICM Collector Peak Current (repetitive) 12 A IB Base Current 0.2 A Ptot Total Dissipation at Tc ≤ 25 oC 29 W Visol Insulation Withstand Voltage (RMS) from All Three Leads to External Heatsink 1500 V Tstg Storage Temperature -65 to 150 oC Tj Max. Operating Junction Temperature 150 oC 1 2 3 T0-220FP R1 Typ. = 10 K Ω R2 Typ. = 150 Ω ® 1/4 |
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