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ESM3030DV Scheda tecnica(PDF) 2 Page - STMicroelectronics

Il numero della parte ESM3030DV
Spiegazioni elettronici  NPN DARLINGTON POWER MODULE
PDF  8 Pages
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

ESM3030DV Scheda tecnica(HTML) 2 Page - STMicroelectronics

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THERMAL DATA
Rthj-case
Rthj-case
Rthc-h
Thermal Resistance Junction-case (transistor)
Max
Thermal Resistance Junction-case (diode)
Max
Thermal Resistance Case-heatsink With Conductive
Grease Applied
Max
0.55
1.2
0.05
oC/W
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25
oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICER #
Collector Cut-off
Current (RBE = 5
Ω)
VCE = VCEV
VCE = VCEV
Tj = 100
oC
1.5
16
mA
mA
ICEV #
Collector Cut-off
Current (VBE = -5)
VCE = VCEV
VCE = VCEV
Tj = 100
oC
1
11
mA
mA
IEBO #
Emitter Cut-off Current
(IC = 0)
VEB = 5 V
1
mA
VCEO(SUS)* Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = 0.2 A
L = 25 mH
Vclamp = 300 V
300
V
hFE
∗
DC Current Gain
IC = 85 A
VCE = 5 V
300
VCE(sat)
∗ Collector-Emitter
Saturation Voltage
IC = 60 A
IB = 0.6 A
IC = 60 A
IB = 0.6 A
Tj = 100
o C
IC = 85 A
IB = 2.4 A
IC = 85 A
IB = 2.4 A
Tj = 100
o C
1.25
1.4
1.5
1.8
1.8
2.2
V
V
V
V
VBE(sat)
∗ Base-Emitter
Saturation Voltage
IC = 85 A
IB = 2.4 A
IC = 85 A
IB = 2.4 A
Tj = 100
o C
2.4
2.5
3
V
V
diC/dt
Rate of Rise of
On-state Collector
VCC = 300 V
RC = 0
tp = 3
µs
IB1 = 0.9 A
Tj = 100
oC
330
430
A/
µs
VCE(3
µs)••
Collector-Emitter
Dynamic Voltage
VCC = 300 V
RC = 5
Ω
IB1 = 0.9 A
Tj = 100
oC
36
V
VCE(5
µs)••
Collector-Emitter
Dynamic Voltage
VCC = 300 V
RC = 5
Ω
IB1 = 0.9 A
Tj = 100
oC
2.2
4
V
ts
tf
tc
Storage Time
Fall Time
Cross-over Time
IC = 60 A
VCC = 50 V
VBB = -5 V
RBB = 0.6
Ω
Vclamp = 300 V
IB1 = 0.6 A
L = 0.04 mH
Tj = 100
oC
2.3
0.35
0.8
3.5
0.6
1.2
µs
µs
µs
VCEW
Maximum Collector
Emitter Voltage
Without Snubber
ICWoff = 100 A
IB1 = 2.4 A
VBB = -5 V
VCC = 50 V
L = 25
µH
RBB = 0.6
Ω
Tj = 125
oC
300
V
VF
∗
Diode Forward Voltage
IF = 85 A
Tj = 100
oC
1.2
1.55
V
IRM
Reverse Recovery
Current
VCC = 200 V
IF = 85 A
diF/dt = -330 A/
µs L < 50 nH
Tj = 100
oC
18
25
A
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
# See test circuits in databook introduction
To evaluate the conduction losses of the diode use the following equations:
VF =1.1 + 0.0045 IF
P = 1.1 IF(AV) + 0.0045 I
2
F(RMS)
ESM3030DV
2/8



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