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STB70NFS03L Scheda tecnica(PDF) 3 Page - STMicroelectronics

Il numero della parte STB70NFS03L
Spiegazioni elettronici  N-channel - 30V - 0.0075ohm - 70A D2PAK STripFET TM Power MOSFET plus schottky rectifier
PDF  13 Pages
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB70NFS03L Scheda tecnica(HTML) 3 Page - STMicroelectronics

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STB70NFS03L
Electrical ratings
3/13
1
Electrical ratings
Table 1.
Mosfet absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage (VGS = 0)
30
V
VGS
Gate- source voltage
± 18
V
ID
Drain current (continuous) at TC = 25°C
70
A
ID
Drain current (continuous) at TC = 100°C
50
A
IDM
(1)
1.
Pulse width limited by safe operating area
Drain current (pulsed)
280
A
PTOT
Total dissipation at TC = 25°C
100
W
Derating factor
0.67
W/°C
dv/dt (2)
2.
ISD < 70A, di/dt < 350A/µs, VDD = 80% V(BR)DSS
Peak diode recovery voltage slope
5.5
V/ns
EAS
(3)
3.
Starting Tj = 25°C, VDD = 25V
Single pulse avalanche energy
500
mJ
Tstg
Storage temperature
-55 to 175
°C
TJ
Operating junction temperature
Table 2.
Schottky absolute maximum ratings
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
30
V
IF(RMS) RMS forward current
20
A
IF(AV)
Average forward current
TL=125°C
δ=0.5
3A
IFSM
Surge non repetitive forward current
tp=10ms
Sinusoidal
75
A
dv/dt
Critical rate of rise of reverse voltage
10000
v/µs
Table 3.
Thermal data
Symbol
Parameter
Value
Unit
Rthj-amb Thermal resistance junction-amb max
1.5
°C/W
Rthj-case Thermal resistance junction-case max
62.5
°C/W
Tl
Maximum lead temperature for soldering purpose
300
°C



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