STS8DNF3LL datasheet(4/12 Pages) STMICROELECTRONICS

Il numero della parte	STS8DNF3LL

Spiegazioni elettronici	Dual N-channel 30V - 0.017OHM - 8A SO-8 Low gate charge STripFET TM II Power MOSFET

PDF	12 Pages

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Produttore elettronici	STMICROELECTRONICS [STMicroelectronics]

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Electrical characteristics

STS8DNF3LL

4/12

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 3.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown voltage

ID = 250 µA, VGS = 0

IDSS

Zero gate voltage

Drain current (VGS = 0)

VDS = Max rating

µA

VDS=Max rating,

TC=125°C

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 16V

±100

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250µA

RDS(on)

Static drain-source on

resistance

VGS = 10V, ID = 4A

VGS = 4.5V, ID = 4A

0.017

0.020

0.024

Ω

Table 4.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

(1)

Pulsed: Pulse duration = 300 µs, duty cycle 1.5.

Forward transconductance

VDS = 15V, ID= 4 A

12.5

Ciss

Input capacitance

VDS = 25V, f = 1 MHz,

VGS = 0

800

Coss

Output capacitance

250

Crss

Reverse transfer

capacitance

Total gate charge

VDD = 15V, ID = 8A,

VGS = 5V

(see Figure 14)

12.5

Qgs

Gate-source charge

3.2

Qgd

Gate-drain charge

4.5

Table 5.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

Rise time

VDD=15 V, ID=4A,

RG=4.7Ω, VGS= 4.5V

(see Figure 13)

td(off)

Turn-off Delay Time

Fall Time

VDD=15 V, ID=4A,

RG=4.7Ω, VGS= 4.5V

(see Figure 13)

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