Motore di ricerca datesheet componenti elettronici
  Italian  ▼
ALLDATASHEETIT.COM

X  

Preview PDF HTML

STGWT60H65DFB Scheda tecnica(PDF) 4 Page - STMicroelectronics

Il numero della parte STGWT60H65DFB
Spiegazioni elettronici  Trench gate field-stop 650 V, 60 A high speed HB series IGBT
PDF  21 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGWT60H65DFB Scheda tecnica(HTML) 4 Page - STMicroelectronics

  STGWT60H65DFB Datasheet HTML 1Page - STMicroelectronics STGWT60H65DFB Datasheet HTML 2Page - STMicroelectronics STGWT60H65DFB Datasheet HTML 3Page - STMicroelectronics STGWT60H65DFB Datasheet HTML 4Page - STMicroelectronics STGWT60H65DFB Datasheet HTML 5Page - STMicroelectronics STGWT60H65DFB Datasheet HTML 6Page - STMicroelectronics STGWT60H65DFB Datasheet HTML 7Page - STMicroelectronics STGWT60H65DFB Datasheet HTML 8Page - STMicroelectronics STGWT60H65DFB Datasheet HTML 9Page - STMicroelectronics Next Button
Zoom Inzoom in Zoom Outzoom out
 4 / 21 page
background image
Table 5. IGBT switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on delay time
VCE = 400 V, IC = 60 A,
RG = 10 Ω,
VGE = 15 V (see Figure 27.
Test circuit for inductive load
switching)
-
66
-
ns
tr
Current rise time
-
38
-
ns
(di/dt)on
Turn-on current slope
-
1216
-
A/µs
td(off)
Turn-off delay time
-
210
-
ns
tf
Current fall time
-
20
-
ns
Eon (1)
Turn-on switching energy
-
1590
-
µJ
Eoff (2)
Turn-off switching energy
-
900
-
µJ
Ets
Total switching energy
-
2490
-
µJ
td(on)
Turn-on delay time
VCE = 400 V,
IC = 60 A, RG = 10 Ω,
VGE = 15 V, TJ = 175 °C
(see Figure 27. Test circuit
for inductive load switching)
-
59
-
ns
tr
Current rise time
-
40
-
ns
(di/dt)on
Turn-on current slope
-
1230
-
A/µs
td(off)
Turn-off-delay time
-
242
-
ns
tf
Current fall time
-
147
-
ns
Eon (1)
Turn-on switching energy
-
2860
-
µJ
Eoff (2)
Turn-off switching energy
-
1255
-
µJ
Ets
Total switching energy
-
4115
-
µJ
1. Including the reverse recovery of the diode.
2. Including the tail of the collector current.
Table 6. Diode switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
trr
Reverse recovery time
IF = 60 A, VR = 400 V,
VGE = 15 V,
di/dt = 100 A/µs
(see Figure 27. Test circuit
for inductive load switching)
-
60
-
ns
Qrr
Reverse recovery charge
-
99
-
nC
Irrm
Reverse recovery current
-
3.3
-
A
dIrr/dt
Peak rate of fall of reverse recovery
current during tb
-
187
-
A/µs
Err
Reverse recovery energy
-
68
-
µJ
trr
Reverse recovery time
IF = 60 A, VR = 400 V,
VGE = 15 V,
di/dt = 100 A/µs,
TJ = 175 °C
(see Figure 27. Test circuit
for inductive load switching)
-
310
-
ns
Qrr
Reverse recovery charge
-
1550
-
nC
Irrm
Reverse recovery current
-
10
-
A
dIrr/dt
Peak rate of fall of reverse recovery
current during tb
-
59
-
A/µs
Err
Reverse recovery energy
-
674
-
µJ
STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB
Electrical characteristics
DS9535 - Rev 8
page 4/21



Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21


Scheda tecnica Scarica

Go To PDF Page


Link URL



Lei ha avuto il aiuto da alldatasheet?  [ DONATE ] 

Di alldatasheet   |   Richest di pubblicita   |   contatti   |   Privacy Policy   |   Collegamento alla scheda tecnica    |   scambio Link   |   Ricerca produttore
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com