© Semiconductor Components Industries, LLC, 2006

July, 2006 − Rev. 4

1

Publication Order Number:

BAS21HT1/D

BAS21HT1

Preferred Device

High Voltage

Switching Diode

Features

MAXIMUM RATINGS

Symbol

Rating

Value

Unit

Continuous Reverse Voltage

250

Vdc

Repetitive Peak Reverse Voltage

250

Vdc

Peak Forward Current

200

mAdc

Peak Forward Surge Current

625

mAdc

THERMAL CHARACTERISTICS

Symbol

Characteristic

Max

Unit

Total Device Dissipation FR−5 Board,

Derate above 25

°C

200

1.57

mW

mW/

°C

Thermal Resistance,

Junction−to−Ambient

635

°C/W

Junction and Storage Temperature

Range

−55 to +150

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. FR−5 Minimum Pad

HIGH VOLTAGE

SWITCHING DIODE

Device

Package

ORDERING INFORMATION

BAS21HT1

SOD−323

3000/Tape & Reel

SOD−323

CASE 477

STYLE 1

Preferred devices are recommended choices for future use

and best overall value.

1

CATHODE

2

ANODE

http://onsemi.com

MARKING

DIAGRAM

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

BAS21HT1G

SOD−323

(Pb−Free)

3000/Tape & Reel

JS M

G

G

1

2

JS

= Device Code

M

= Date Code*

G

= Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation may vary depending

upon manufacturing location.