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UP2518-AE3-6-R Scheda tecnica(PDF) 2 Page - Unisonic Technologies

Il numero della parte UP2518-AE3-6-R
Spiegazioni elettronici  LOW VCE(SAT) PNP SILICON POWER TRANSISTORS
PDF  4 Pages
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Produttore elettronici  UTC [Unisonic Technologies]
Homepage  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UP2518-AE3-6-R Scheda tecnica(HTML) 2 Page - Unisonic Technologies

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UP2518
PNP EPITAXIAL SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R206-083,A
ABSOLUTE MAXIMUM RATING (Ta = 25℃)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-20
V
Collector-Emitter Voltage
VCEO
-20
V
Emitter-Base Voltage
VEBO
-5
V
Peak Pulse Current (Note 2)
IPEAK
-6
A
Continuous Collector Current
IC
-1.5
A
Base Current
IB
-500
mA
Power Dissipation at Ta =25°C(Note 3)
PD
625
mW
Junction Temperature
TJ
+150
℃
Storage Temperature
TSTG
-40~+150
℃
Note 1.Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width=300ms. Duty cycle≤2%
3. Assume the device is mounted and measured on a ceramic substrate15x15x0.6mm
ELECTRICAL CHARACTERISTICS (Ta = 25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
Collector-Base Breakdown Voltage
BVCBO IC= -100µA
-20
-65
V
Collector-Emitter Breakdown Voltage
BVCEO IC= -10mA
-20
-55
V
Emitter-Base Breakdown Voltage
BVEBO IE= -100µA
-5
-8.8
V
Collector Cut-Off Current
ICBO
VCB= -15V
-100
nA
Emitter Cut-Off Current
IEBO
VEB= -4V
-100
nA
Collector Emitter Cut-Off Current
ICES
VCES= -15V
-100
nA
Collector-Emitter Saturation Voltage
VCE(SAT)
IC= -100mA, IB= -10mA
IC= -1A, IB= -20mA
IC= -1.5A, IB= -50mA
-16
-130
-145
-40
-200
-220
mV
mV
mV
Base-Emitter Saturation Voltage
VBE(SAT) IC= -1.5A, IB= -50mA
-0.87
-1.0
V
Base-Emitter Turn-On Voltage
VBE(ON) IC= -2A, VCE= -2V
-0.81
-1.0
V
DC Current Gain
hFE
IC= -10mA, VCE= -2V
IC= -100mA, VCE= -2V
IC= -2A, VCE= -2V
IC= -4A, VCE= -2V
IC= -6A, VCE= -2V
300
300
150
35
15
475
450
230
70
30
Transition Frequency
fT
IC= -50mA, VCE =-10V, f=100MHz
150
180
MHZ
Output Capacitance
COB
VCB= -10V, f=1MHz
21
30
pF
Turn-On Time
t(ON)
40
ns
Turn-Off Time
t(OFF)
VCC= -10V, IC= -1A
IB1= IB2= -20mA
670
ns
*Measured under pulsed conditions. Pulse width=300ms. Duty cycle ≤ 2%



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