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UP2518L-AE3-6-R Scheda tecnica(PDF) 1 Page - Unisonic Technologies |
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UP2518L-AE3-6-R Scheda tecnica(HTML) 1 Page - Unisonic Technologies |
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1 / 4 page ![]() UNISONIC TECHNOLOGIES CO., LTD UP2518 PNP EPITAXIAL SILICON TRANSISTOR www.unisonic.com.tw 1 of 4 Copyright © 2005 Unisonic Technologies Co., LTD QW-R206-083,A LOW VCE(SAT) PNP SILICON POWER TRANSISTORS FEATURES * Extremely low collector-emitter saturation voltage VCE(SAT) and corresponding extremely low equivalent on-resistance RCE(SAT) (97mΩ at 1.5A) * High collector current capability(1.5A) * High peak pulse current up to 6A * High collector current gain SOT-23 1 2 3 *Pb-free plating product number: UP2518L PIN CONFIGURATION PIN NO. PIN NAME 1 EMITTER 2 BASE 3 COLLECTOR ORDERING INFORMATION Order Number Normal Lead Free Plating Package Packing UP2518-AE3-6-R UP2518L-AE3-6-R SOT-23 Tape Reel MARKING INFORMATION Y18 |
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