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2SD400 Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SD400 Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page ![]() isc Silicon NPN Power Transistor 2SD400 www.iscsemi.com 2023-9-05 1 DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 25V(Min) · Collector-Emitter Saturation Voltage -VCE(sat)= 0.3 V(Max) @IC=0.5A APPLICATIONS · Designed for power amplifier,high speed switching and regulated power supply applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1 A PC Collector Power Dissipation 0.75 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
Codice articolo simile - 2SD400 |
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Descrizione simile - 2SD400 |
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