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1N60-TN3-R Scheda tecnica(PDF) 2 Page - Unisonic Technologies

Il numero della parte 1N60-TN3-R
Spiegazioni elettronici  1.2 Amps, 600 Volts N-CHANNEL MOSFET
PDF  8 Pages
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Produttore elettronici  UTC [Unisonic Technologies]
Homepage  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

1N60-TN3-R Scheda tecnica(HTML) 2 Page - Unisonic Technologies

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1N60
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 8
www.unisonic.com.tw
QW-R502-052,D
ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
600
V
Gate-Source Voltage
VGSS
±30
V
Avalanche Current (Note 2)
IAR
1.2
A
TC = 25℃
1.2
Continuous Drain Current
TC = 100℃
ID
0.76
A
Drain Current-Pulsed (Note 2)
IDP
4.8
A
Repetitive(Note 2)
EAR
4.0
mJ
Avalanche Energy
Single Pulse(Note 3)
EAS
50
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TC=25℃
40
W
Total Power Dissipation
Derate above 25°C
PD
0.32
W/℃
Junction Temperature
TJ
+150
℃
Storage Temperature
TSTG
-55 ~ +150
℃
Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
3. L=64mH, IAS=1.2A, VDD=50V, RG=25Ω, Starting TJ =25°C
4. ISD≤1.2A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ =25°C
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
TO-251
112
TO-252
112
Thermal Resistance Junction-Ambient
TO-220
θJA
54
TO-251
12
TO-252
12
Thermal Resistance Junction-Case
TO-220
θJc
4
℃
/W
ELECTRICAL CHARACTERISTICS (TC=25℃, unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS VGS = 0V, ID = 250Μa
600
V
VDS = 600V, VGS = 0V
10
Μa
Zero Gate Voltage Drain Current
IDSS
VDS = 480V, TC = 125℃
100
Μa
Forward
VGS = 30V, VDS = 0V
100
Na
Gate-Body Leakage Current
Reverse
IGSS
VGS = -30V, VDS = 0V
-100
Breakdown Voltage Temperature
Coefficient
△
BVDSS/
T
△ J
ID = 250Μa
0.4
V/℃
On Characteristics
Gate Threshold Voltage
VGS(TH) VDS = VGS, ID = 250Μa
2.0
4.0
V
Static Drain-Source On-Resistance
RDS(ON) VGS = 10V, ID = 0.6A
9.3
11.5
Ω
Forward Transconductance
gFS
VDS = 50V, ID = 0.6A (Note 1)
0.9
S
Dynamic Characteristics
Input Capacitance
CISS
120
150
Pf
Output Capacitance
COSS
20
25
Pf
Reverse Transfer Capacitance
CRSS
VDS=25V, VGS=0V, f=1MHz
3.0
4.0
Pf



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