Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BUT11AF

MECHANICAL DATA

Dimensions in mm

Net Mass: 2 g

Fig.15. SOT186; The seating plane is electrically isolated from all terminals.

Notes

1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent

damage to MOS gate oxide.

2. Refer to mounting instructions for F-pack envelopes.

3. Epoxy meets UL94 V0 at 1/8".

10.2

max

5.7

max

3.2

3.0

0.9

0.5

4.4

max

2.9 max

4.4

4.0

seating

plane

7.9

7.5

17

max

0.55 max

1.3

13.5

min

2.54

5.08

0.9

0.7

12

3

M

0.4

top view

3.5 max

not tinned

4.4

August 1997

7

Rev 1.000