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UTC BD136/138/140

PNP EPITAXIAL SILICON TRANSISTOR

UTC

UNISONIC TECHNOLOGIES CO. LTD

QW-R204-013,B

ELECTRICAL CHARACTERISTICS(Tc=25°C,unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

Collector-Emitter Sustaining Voltage

BD136

BD138

BD140

VCEO(sus)* IC =-30 mA, IB=0

-45

-60

-80

Collector Cut-off Current

ICBO

VCB =-30 V, IE=0

VCB =-30 V, IE=0, Tc = 125°C

-0.1

-10

µA

Emitter Cut- off Current

IEBO

VEB = -5 V, IC=0

-10

µA

hFE1

hFE2

DC Current Gain

hFE3

VCE=-2V, IC =-5 mA,

VCE=-2V, IC =-0.5A ,

VCE=-2V, IC =-150 mA,

250

Collector-Emitter Saturation Voltage

VCE(sat)*

IC =-0.5 A, IB = -0.05 A

-0.5

Base-Emitter Voltage

VBE*

IC =-0.5 A, VCE =-2 V

-1

* Pulsed: Pulse duration ≦ 300 µs, duty cycle 1.5 %

CLASSIFICATION OF hFE3

RANK

-6

-10

-16

RANGE

40~100

63~160

100~250

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

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