BUT11AX datasheet(4/8 Pages) PHILIPS

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Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BUT11AX

Fig.7. Normalised power derating and second

breakdown curves.

Fig.8. Reverse bias safe operating area. T

j ≤ Tj max

Fig.9. Typical DC current gain.

FE = f(IC); parameter VCE

Fig.10. Forward bias safe operating area. T

hs ≤ 25 ˚C

(1)

tot max and Ptot peak max lines.

(2)

Second breakdown limits.

Region of permissible DC operation.

Extension for repetitive pulse operation.

III

Extension during turn-on in single

transistor converters provided that

BE ≤ 100 Ω and tp ≤ 0.6 µs.

NB:

Mounted with heatsink compound and

± 5 newton force on the centre of the

envelope.

100

120

140

Ths / C

Normalised Derating

120

110

100

with heatsink compound

P tot

100

1000

100

0.1

0.01

tp =

10 us

100 us

1 ms

10 ms

IC / A

/ V

ICM max

IC max

= 0.01

III

500 ms

(1)

(2)

400

800

1200

IC / A

BUT11AX

VCE / V

0.01

0.1

100

IC / A

BUT11AX

100

November 1995

Rev 1.100

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