BYD11 datasheet(3/7 Pages) PHILIPS

3 / 7 page

1996 Sep 26

Not recommended for new designs

Philips Semiconductors

Product speciﬁcation

Controlled avalanche rectiﬁers

BYD11 series

ELECTRICAL CHARACTERISTICS

Tj =25 °C; unless otherwise speciﬁed.

THERMAL CHARACTERISTICS

Note

1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper

≥40 µm, see Fig.9.

For more information please refer to the

“General Part of associated Handbook”.

IF(AV)

average forward current

Ttp =55 °C;

lead length = 10 mm;

averaged over any 20 ms

period; see Figs 2 and 4

−

0.50 A

Tamb =60 °C; PCB mounting

(see Fig.9);

averaged over any 20 ms

period; see Figs 3 and 4

−

0.37 A

IFSM

non-repetitive peak forward current

t = 10 ms half sinewave;

Tj =Tj max prior to surge;

VR =VRRMmax

−

PRSM

non-repetitive peak reverse power

dissipation

t=20

µs half sinewave;

Tj =Tj max prior to surge

−

200

Tstg

storage temperature

−65

+175

°C

junction temperature

see Fig.5

−65

+175

°C

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

VFtzt

forward voltage

IF = 0.5 A; Tj =Tj max; see Fig.6

−−

0.91

IF = 0.5 A; see Fig.6

−−

1.06

V(BR)R

reverse avalanche

breakdown voltage

IR = 0.1 mA

BYD11D

225

−−

BYD11G

450

−−

BYD11J

650

−−

BYD11K

900

−−

BYD11M

1100

−−

reverse current

VR =VRRMmax; see Fig.7

−−

µA

VR =VRRMmax; Tj = 165 °C; see Fig.7

−−

µA

trr

reverse recovery time when switched from IF = 0.5 A to IR =1A;

measured at IR = 0.25 A; see Fig.10

−

µs

diode capacitance

VR = 0 V; f = 1 MHz; see Fig.8

−

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-tp

thermal resistance from junction to tie-point

lead length = 10 mm

180

K/W

Rth j-a

thermal resistance from junction to ambient

note 1

250

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

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