BYV72F datasheet(2/6 Pages) PHILIPS

2 / 6 page

Philips Semiconductors

Product specification

Rectifier diodes

BYV72F series

ultrafast

ISOLATION LIMITING VALUE & CHARACTERISTIC

hs = 25 ˚C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

isol

Repetitive peak voltage from all

R.H.

≤ 65 % ; clean and dustfree

2500

three terminals to external

heatsink

isol

Capacitance from T2 to external f = 1 MHz

heatsink

THERMAL RESISTANCES

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

th j-hs

Thermal resistance junction to

both diodes conducting

heatsink

with heatsink compound

4.0

K/W

without heatsink compound

8.0

K/W

per diode

with heatsink compound

5.0

K/W

without heatsink compound

9.0

K/W

th j-a

Thermal resistance junction to

in free air

K/W

ambient

STATIC CHARACTERISTICS

j = 25 ˚C unless otherwise stated

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Forward voltage (per diode)

F = 15 A; Tj = 150˚C

0.83

0.90

F = 15 A

0.95

1.05

F = 30 A

1.00

1.20

Reverse current (per diode)

R = VRWM; Tj = 100 ˚C

0.5

R = VRWM

100

µA

DYNAMIC CHARACTERISTICS

j = 25 ˚C unless otherwise stated

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Reverse recovery charge (per

F = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs-

diode)

Reverse recovery time (per

F = 1 A; VR ≥ 30 V;

diode)

-dI

F/dt = 100 A/µs

rrm

Peak reverse recovery current

F = 10 A; VR ≥ 30 V;

2.4

(per diode)

-dI

F/dt = 50 A/µs; Tj = 100 ˚C

Forward recovery voltage (per

F = 1 A; dIF/dt = 10 A/µs-

diode)

October 1994

Rev 1.100

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