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BYW56 Scheda tecnica(PDF) 2 Page - NXP Semiconductors |
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BYW56 Scheda tecnica(HTML) 2 Page - NXP Semiconductors |
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2 / 7 page ![]() 1996 Oct 03 2 Philips Semiconductors Product specification Controlled avalanche rectifiers BYW54 to BYW56 FEATURES • Glass passivated • High maximum operating temperature • Low leakage current • Excellent stability • Guaranteed avalanche energy absorption capability • Available in ammo-pack. DESCRIPTION Rugged glass package, using a high temperature alloyed construction. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. 2/3 page (Datasheet) MAM047 ka Fig.1 Simplified outline (SOD57) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage BYW54 − 600 V BYW55 − 800 V BYW56 − 1000 V VRWM crest working reverse voltage BYW54 − 600 V BYW55 − 800 V BYW56 − 1000 V VR continuous reverse voltage BYW54 − 600 V BYW55 − 800 V BYW56 − 1000 V IF(AV) average forward current Ttp =45 °C; lead length = 10 mm; averaged over any 20 ms period; see Figs 2 and 4 − 2.0 A Tamb =80 °C; PCB mounting (see Fig.9); averaged over any 20 ms period; see Figs 3 and 4 − 0.8 A IFSM non-repetitive peak forward current t = 10 ms half sinewave − 50 A ERSM non-repetitive peak reverse avalanche energy L = 120 mH; Tj =Tj max prior to surge; inductive load switched off − 20 mJ Tstg storage temperature −65 +175 °C Tj junction temperature see Fig.5 −65 +175 °C |
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