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CGY2105ATS Scheda tecnica(PDF) 3 Page - NXP Semiconductors

Il numero della parte CGY2105ATS
Spiegazioni elettronici  High dynamic range dual LNA MMIC
PDF  16 Pages
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Produttore elettronici  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

CGY2105ATS Scheda tecnica(HTML) 3 Page - NXP Semiconductors

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1999 Dec 23
3
Philips Semiconductors
Preliminary specification
High dynamic range dual LNA MMIC
CGY2105ATS
PINNING
SYMBOL
PIN
DESCRIPTION
VS2
1, 2, 14 and 15
amplifier 2 source
IN2
3
amplifier 2 input
n.c.
4
not connected
n.c.
5
not connected
IN1
6
amplifier 1 input
VS1
7, 8, 10 and 11
amplifier 1 source
OUT1
9
amplifier 1 drain output
VG1
12
amplifier 1 gate bias
VG2
13
amplifier 2 gate bias
OUT2
16
amplifier 2 drain output
handbook, halfpage
CGY2105ATS
FCA097
1
2
3
4
5
6
7
8
VS2
VS2
IN2
n.c.
n.c.
IN1
VS1
VS1
OUT2
VS2
VS2
VG2
VG1
VS1
VS1
OUT1
16
15
14
13
12
11
10
9
Fig.2 Pin configuration.
LIMITING VALUES
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
drain-source voltage
−−
5V
VGS
gate-source voltage
−3
−
+1
V
VDG
drain-gate voltage
−−
7V
Vsupply
positive supply voltage
see Chapter “Application and test
information”
−−
6V
Vneg
negative supply voltage
see Chapter “Application and test
information”
−6
−−
V
Tamb
ambient temperature
−40
−
+85
°C
Tj
junction temperature
−−
150
°C
Tstg
storage temperature
−−
150
°C
Ptot
total power dissipation
Tamb <85 °C
−−
430
mW
SYMBOL
PARAMETER
VALUE
UNIT
Rth(j-a)
thermal resistance from junction to ambient
138
K/W



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