ED1802P datasheet(3/8 Pages) PHILIPS

3 / 8 page

1999 Apr 27

Philips Semiconductors

Product speciﬁcation

PNP general purpose transistor

ED1802

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

Note

1. Pulse test: tp ≤ 300 µs; δ≤ 0.02.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

200

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB = −20 V

−−100

IE = 0; VCB = −20 V; Tj = 150 °C

−−5

µA

IEBO

emitter cut-off current

IC = 0; VEB = −5V

−−500

hFE

DC current gain

IC = −500 mA; VCE = −1V

−

IC = −100 mA; VCE = −1 V

106

476

hFE

DC current gain

IC = −100 mA; VCE = −1V

ED1802K

106

150

ED1802L

132

189

ED1802M

170

233

ED1802N

213

300

ED1802P

333

476

VCEsat

collector-emitter saturation voltage

IC = −500 mA; IB = −50 mA; note 1

−−700

collector capacitance

IE =ie = 0; VCB = −10 V; f = 1 MHz

−

transition frequency

IC = −10 mA; VCE = −5 V; f = 100 MHz 80

−

MHz

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