CED6030L/CEU6030L

Parameter

Symbol

Min

Units

Off Characteristics

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate Body Leakage Current, Forward

Forwand Transconductance

Gate Threshold Voltage

Static Drain-Source

On-Resistance

15.5

1.6

1

3

-100

100

1

m

Ω

V

nA

nA

µ

A

V

S

6 - 79

Gate Body Leakage Current, Reverse

Input Capacitance

Reverse Transfer Capacitance

Output Capacitance

Turn-On Delay Time

Turn-On Fall Time

Turn-Off Delay Time

Turn-On Rise Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Drain-Source Diode Characteristics and Maximun Ratings

Drain-Source Diode Forward Current

Test Condition

Typ

Max

30

f = 1.0 MHz

1315

525

110

10

190

55

130

16

250

90

200

19

5

9

23

40

1.3

0.9

32

pF

pF

pF

ns

ns

ns

ns

nC

nC

nC

A

V

12

22

m

Ω

18.5

6

Notes :

a.Repetitive Rating : Pulse width limited by maximum junction temperature.

b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.

c.Guaranteed by design, not subject to production testing.