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ISB3018 Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited |
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ISB3018 Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() www.iscsemi.com 1 isc Silicon NPN Power Transistor ISB3018 DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 250V(Min) · Collector-Emitter Saturation Voltage -VCE(sat)= 0.5V(Max) @IC=1A APPLICATIONS · Designed for power amplifier,high speed switching and regulated power supply applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 250 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 8 A ICM Collector Current-Peak 16 A IB Base Current 2 A PC Collector Power Dissipation @Ta=25℃ 2 W Collector Power Dissipation @TC=25℃ 50 Tj Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.5 ℃ /W |
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