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2SA949 Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SA949 Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() 2SA949 isc Silicon PNP Power Transistor www.iscsemi.com 1 DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO=-150V(Min) · Collector-Emitter Saturation Voltage -VCE(sat)= -0.8V(Max) @IC= -10mA APPLICATIONS · Designed for power amplifier,high speed switching and regulated power supply applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -50 mA IB Base Current -5 mA PC Collector Power Dissipation TC=25℃ 800 mW Tj Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
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