NJ72 datasheet(1/2 Pages) INTERFET

Il numero della parte	NJ72

Spiegazioni elettronici	Silicon Junction Field-Effect Transistor

PDF	2 Pages

Scroll/Zoom	100%

Produttore elettronici	INTERFET [InterFET Corporation]

Homepage	http://www.interfet.com

Logo

1 / 2 page

F-26

01/99

NJ72 Process

Silicon Junction Field-Effect Transistor

¥ VHF/UHF Amplifier

Absolute maximum ratings at TA = 25¡C

Gate Current, Ig

10 mA

Operating Junction Temperature, Tj

+150°C

Storage Temperature, Ts

– 65°C to +175°C

Devices in this Databook based on the NJ72 Process.

Datasheet

IFN5564, IFN5565

IFN5566

J308, J309

J310

Datasheet

U308, U309

U430, U431

VCR2N

At 25°C free air temperature:

NJ72 Process

Static Electrical Characteristics

Min

Typ

Max

Unit

Test Conditions

Gate Source Breakdown Voltage

V(BR)GSS

– 25

– 40

V

IG = – 1 µA, VDS = ØV

Reverse Gate Leakage Current

IGSS

– 10

– 100

pA

VGS = – 15V, VDS = ØV

Drain Saturation Current (Pulsed)

IDSS

590

mA

VDS = 15V, VGS = ØV

Gate Source Cutoff Voltage

VGS(OFF)

– 1

– 5.5

V

VDS = 15V, ID = 1 nA

Dynamic Electrical Characteristics

Forward Transconductance

gfs

22

mS

VDS = 15V, VGS = ØV

f = 1 kHz

Drain Source ON Resistance

rds(on)

40

Ω

ID = 1 mA, VGS = ØV

f = 1 kHz

Input Capacitance

Ciss

6.5

pF

VDS = ØV, VGS = – 10V

f = 1 MHz

Feedback Capacitance

Crss

2.5

pF

VDS = ØV, VGS = – 10V

f = 1 MHz

1000 N. Shiloh Road, Garland, TX 75042

(972) 487-1287 FAX (972) 276-3375

www.interfet.com

G

S-D

Die Size = 0.020" X 0.020"

All Bond Pads = 0.004" Sq.

Substrate is also Gate.

Databook.fxp

1/13/99 2:09 PM

Page F-26

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