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APT66M60L Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited

Il numero della parte APT66M60L
Spiegazioni elettronici  isc N-Channel MOSFET Transistor
PDF  2 Pages
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Produttore elettronici  ISC [Inchange Semiconductor Company Limited]
Homepage  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

APT66M60L Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc website：www.iscsemi.com
isc & iscsemi is registered trademark
2023-11-06
1
isc N-Channel MOSFET Transistor
APT66M60L
FEATURES
·
Drain Current –ID= 70A@ TC=25℃
·
Drain Source Voltage-
: VDSS=600V(Min)
·
Static Drain-Source On-Resistance
: RDS(on) =75mΩ(Max)
·
100% avalanche tested
DESCRIPTION
·
Switch Mode Power Supply (SMPS)
·
Uninterruptible Power Supply (UPS)
·
Power Factor Correction (PFC)
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
600
V
VGS
Gate-Source Voltage-Continuous
±
30
V
ID
Drain Current-Continuous
70
A
IDM
Drain Current-Single Pluse
280
A
PD
Total Dissipation @TC=25℃
1135
W
TJ
Max. Operating Junction Temperature
-55~150
℃
Tstg
Storage Temperature
-55~150
℃
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
0.11
℃
/W


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