UTD351LAE3-R datasheet(3/9 Pages) VBSEMI

Il numero della parte	UTD351LAE3-R

Spiegazioni elettronici	N-Channel 30-V (D-S) MOSFET

PDF	9 Pages

Scroll/Zoom	100%

Produttore elettronici	VBSEMI [VBsemi Electronics Co.,Ltd]

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TYPICAL CHARACTERISTICS

25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

0.0

0.5

1.0

1.5

2.0

2.5

3.0

VGS =10 V thru 4 V

VGS =3 V

VDS - Drain-to-Source Voltage (V)

0.00

0.02

0.0

0.10

369

VGS =4.5 V

VGS =10 V

ID - Drain Current (A)

1234

VDS =24 V

VDS =7.5 V

ID =3.4 A

VDS =15 V

Qg - Total Gate Charge (nC)

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

TC = 25 °C

TC = 125 °C

TC = - 55 °C

VGS - Gate-to-Source Voltage (V)

Crss

100

150

200

250

300

Ciss

Coss

VDS - Drain-to-Source Voltage (V)

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

1.5

1.6

- 50

- 25

100

125

150

ID =3.2 A

VGS =10 V

TJ -Junction Temperature (°C)

UTD351LAE3-R

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