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J174 Scheda tecnica(PDF) 4 Page - NXP Semiconductors |
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J174 Scheda tecnica(HTML) 4 Page - NXP Semiconductors |
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4 / 6 page ![]() April 1995 4 Philips Semiconductors Product specification P-channel silicon field-effect transistors J174; J175; J176; J177 DYNAMIC CHARACTERISTICS Tj =25 °C unless otherwise specified Input capacitance, f = 1 MHz VGS = 10 V; VDS =0V Cis typ. 8 pF VGS =VDS =0 Cis typ. 30 pF Feedback capacitance, f = 1 MHz VGS = 10 V; VDS =0V Crs typ. 4 pF Switching times (see Fig.2 + 3) J174 J175 J176 J177 Delay time td typ. 2 5 15 20 ns Rise time tr typ. 5 10 20 25 ns Turn-on time ton typ. 7 15 35 45 ns Storage time ts typ. 5 10 15 20 ns Fall time tf typ. 10 20 20 25 ns Turn-off time toff typ. 15 30 35 45 ns Test conditions: −V DD 10 6 6 6 V VGS off 12 8 6 3 V RL 560 1200 2000 2900 Ω VGS on 00 0 0 V Fig.2 Switching times test circuit. handbook, halfpage MBK292 RL 50 Ω D.U.T 50 Ω Vin Vout −VDD Fig.3 Input and output waveforms; td + tr =ton ;ts +tf =toff. MBK293 VGSoff INPUT OUTPUT ts tf 90% 10% 10% 90% 10% 90% td tr |
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