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Motore di ricerca datesheet componenti elettronici |
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Motore di ricerca datesheet componenti elettronici |
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ISCF8019 Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited |
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ISCF8019 Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  ISCF8019 eq SCT20N170AG SiC N-Channel MOSFET www.iscsemi.com 1 FEATURES · High Blocking Voltage with Low On-Resistance · RDS(ON)= 64mΩ（TYP.）@VGS= 20V · High Speed Switching with Low Capacitance · Avalanche Ruggedness APPLICATIONS · Motor Drives · Solar Inverters, UPS · Down Hole Drilling · Battery Chargers Absolute Maximum Ratings(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 1700 V VGS Gate-Source voltage -10/+22 V ID Drain Current-Continuous 43 A Drain Current-Continuous @Tc=100℃ 32 A IDM Drain Current-Single Pluse 129 A PD Total Dissipation @TC=25℃ 313 W TJ Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ |
Codice articolo simile - ISCF8019 |
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Descrizione simile - ISCF8019 |
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