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AM29SL160C Scheda tecnica(PDF) 40 Page - Advanced Micro Devices |
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AM29SL160C Scheda tecnica(HTML) 40 Page - Advanced Micro Devices |
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40 / 52 page ![]() 38 Am29SL160C 21635C5 January 23, 2007 D A TA SH EE T AC CHARACTERISTICS Erase/Program Operations Notes: 1. Not 100% tested. 2. See “Erase And Programming Performance” on page 46 for more information. Parameter Speed Options JEDEC Std. Description -100 -120 -150 Unit t AVAV t WC Write Cycle Time (Note 1) Min 100 120 150 ns t AVWL t AS Address Setup Time Min 0 ns tWLAX tAH Address Hold Time Min 50 60 70 ns tDVWH tDS Data Setup Time Min 50 60 70 ns tWHDX tDH Data Hold Time Min 0 ns t GHWL t GHWL Read Recovery Time Before Write (OE# High to WE# Low) Min 0 ns tELWL tCS CE# Setup Time Min 0 ns tWHEH tCH CE# Hold Time Min 0 ns tWLWH tWP Write Pulse Width Min 50 60 70 ns tWHWL tWPH Write Pulse Width High Min 30 ns tWHWH1 tWHWH1 Programming Operation (Notes 1, 2) Byte Typ 10 µs Word Typ 12 Accelerated Program Operation, Byte or Word (Note 2) Typ 8 µs t WHWH2 t WHWH2 Sector Erase Operation (Notes 1, 2) Typ 2 sec t VCS V CC Setup Time Min 50 µs t RB Recovery Time from RY/BY# Min 0 ns t BUSY Program/Erase Valid to RY/BY# Delay Max 200 ns |
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