SS52G~SS520G

ROHS

Revision March 1,2022

www.unsemi.com.tw

www.unsemi.com.tw

For technical questions, contact: tech@unsemi.com.tw

Specifications are subject to change without notice.

Please refer to www.unsemi.com.tw for current information.

1/3

Surface Mount Schottky Barrier Rectifier

Features

Mechanical Data



Metal silicon junction, majority carrier conduction



For surface mounted applications



Low power loss, high efficiency



High forward surge current capability



For use in low voltage, high frequency inverters,

free wheeling, and polarity protection applications



Case: SMA



Quantity Per Reel : 2,000pcs



Approx. Weight : 60mg / 0.0021oz



Terminals: Solderable per MIL-STD-750, Method 2026

1：Cathode

2：Anode

Parameter

Symbol SS52G SS54G SS56G SS58G SS510G SS512G SS515G SS520G Units

VRRM

VRMS

VDC

IF(AV)

VF

IR

IR

Cj

R

θJA

TJ

Tstg

V

V

V

A

V

pF

℃/

W

℃

℃

Ta=25℃

Ta=100℃

（

1）

Note:(1) Measured at 1 MHz and applied reverse voltage of 4VDC.

(2) P.C.B. mounted with 2.0" X 2.0" (5 X 5cm) copper pad areas.

Maximum Repetitive Peak Reverse Voltage

Maximum RMS voltage

Maximum DC Blocking Voltage

Maximum Average Forward Rectified Current

Max Instantaneous Forward Voltage at 5A

Typical Junction Capacitance

Typical Thermal Resistance

Operating Junction Temperature Range

Storage Temperature Range

20

14

20

40

28

40

60

42

60

80

56

80

100

70

100

120

84

120

150

105

150

200

140

200

SMA

Peak Forward Surge Current,8.3ms Single

Half Sine-wave Superimposed on Rated

Load (JEDEC method)

Maximum DC Reverse Current

at Rated DC Reverse Voltage

（

2）

IFSM

A

5.0

120

0.55

0.70

0.85

1.0

50

300

60

-55 ~ +150

-55 ~ +150

500

mA

1

2

Maximum Ratings and Electrical Characteristics

Ratings at 25℃ ambient temperature unless otherwise specified.

Single phase half-wave 60Hz, resistive or inductive load, for capacitive load current derate by 20%.