AM29LV065MU112REF datasheet(56/62 Pages) AMD

56 / 62 page

Am29LV065MU

September 12, 2006

DA TA

SH EET

ERASE AND PROGRAMMING PERFORMANCE

Notes:

1. Typical program and erase times assume the following conditions: 25

°C, 3.0 V V

CC, 100,000 cycles. Additionally,

programming typicals assume checkerboard pattern.

2. Under worst case conditions of 90

°C, V

CC = 3.0 V, 100,000 cycles.

3. Effective write buffer specification is based upon a 32–byte write buffer operation.

4. Byte programming specification is based upon a single byte programming operation not utilizing the write buffer.

5. In the pre-programming step of the Embedded Erase algorithm, all bits are programmed to 00h before erasure.

6. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Table

10 for further information on command definitions.

7. The device has a minimum erase and program cycle endurance of 100,000 cycles.

LATCHUP CHARACTERISTICS

Note: Includes all pins except V

CC. Test conditions: VCC = 3.0 V, one pin at a time.

Parameter

Typ (Note 1)

Max (Note 2)

Unit

Comments

Sector Erase Time

0.5

sec

Excludes 00h programming

prior to erasure (Note 5)

Chip Erase Time

128

sec

Effective Byte Program Time, using the Write

Buffer (Note 3)

µs

Excludes system level

overhead (Note 6)

Effective Accelerated Byte Program Time, using

the Write Buffer (Note 3)

8.8

µs

Single Byte Program Time

100

800

µs

Accelerated Single Byte Program Time (Note 4)

720

µs

Chip Program Time, using the Write Buffer

170

sec

Description

Min

Max

Input voltage with respect to V

SS on all pins except I/O pins

(including A9, OE#, and RESET#)

–1.0 V

12.5 V

Input voltage with respect to V

SS on all I/O pins

–1.0 V

CC + 1.0 V

CC Current

–100 mA

+100 mA

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