SI9948 datasheet(4/8 Pages) UMW

Il numero della parte	SI9948

Spiegazioni elettronici	Dual P-Channel MOSFET

PDF	8 Pages

Scroll/Zoom	100%

Produttore elettronici	UMW [Guangdong Youtai Semiconductor Co., Ltd.]

Homepage	https://www.umw-ic.com/

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4 / 8 page

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Source-Drain Diode Forward Voltage

Threshold Voltage

0.0

0.2

0.4

0.6

0.8

1.0

1.2

0.01

0.001

0.1

100

TJ = 150 °C

TJ = - 50 °C

TJ = 25 °C

VSD -Source-to-Drain Voltage (V)

- 0.2

0.0

0.2

0.4

0.6

- 50

- 25

100

125

150

ID = 250 µA

ID =1mA

TJ - Temperature (°C)

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power, Junction-to-Ambient

0.00

0.02

0.04

0.06

0.08

0.10

TJ = 25 °C

TJ = 125 °C

ID = -6 .3 A

VGS - Gate-to-Source Voltage (V)

100

00.01

Time (s)

0.1

Safe Operating Area

100

0.1

100

0.01

0.1

TA = 25 °C

Single Pulse

10 s

Limited byRDS(on)*

BVDSS Limited

1ms

100 µs

10 ms

1s,DC

100 ms

VDS - Drain-to-Source Voltage (V)

* VGS > minimum VGS at which RDS(on) is specified

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Dual P-Channel MOSFET

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SI9948

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