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L033MU01VI Scheda tecnica(PDF) 32 Page - SPANSION

Il numero della parte L033MU01VI
Spiegazioni elettronici  32 Megabit (4 M x 8-Bit) MirrorBit??3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O??Control
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Am29LV033MU
September 12, 2006
DA TA
SH EET
The system can monitor DQ3 to determine if the sec-
tor erase timer has timed out (See the section on DQ3:
Sector Erase Timer.). The time-out begins from the ris-
ing edge of the final WE# pulse in the command
sequence.
When the Embedded Erase algorithm is complete, the
device returns to reading array data and addresses
are no longer latched. The system can determine the
status of the erase operation by reading DQ7, DQ6,
DQ2, or RY/BY# in the erasing sector. Refer to the
Write Operation Status section for information on
these status bits.
Once the sector erase operation has begun, only the
Erase Suspend command is valid. All other com-
mands are ignored. However, note that a hardware
reset immediately terminates the erase operation. If
that occurs, the sector erase command sequence
should be reinitiated once the device has returned to
reading array data, to ensure data integrity.
Figure 7 illustrates the algorithm for the erase opera-
tion. Refer to the Erase and Program Operations ta-
bles in the AC Characteristics section for parameters,
and Figure 19 section for timing diagrams.
Figure 7.
Erase Operation
START
Write Erase
Command Sequence
(Notes 1, 2)
Data Poll to Erasing
Bank from System
Data = FFh?
No
Yes
Erasure Completed
Embedded
Erase
algorithm
in progress
Notes:
1. See Table 10 for erase command sequence.
2. See the section on DQ3 for information on the sector
erase timer.



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