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Motore di ricerca datesheet componenti elettronici |
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Motore di ricerca datesheet componenti elettronici |
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ISCF8021 Scheda tecnica(PDF) 3 Page - Inchange Semiconductor Company Limited |
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ISCF8021 Scheda tecnica(HTML) 3 Page - Inchange Semiconductor Company Limited |
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3 / 4 page  ISCF8021 eq C3M0075120K SiC N-Channel MOSFET www.iscsemi.com 3 SOURCE-DRAIN BODY DIODE CHARACTERISTICS Drain - Source Body Diode Characteristics VSD Diode Forward Voltage ISD= 20A; VGS= -4V -- 4.3 -- V VSD Diode Forward Voltage ISD= 20A; VGS= -4V;TJ=175℃ -- 3.8 -- V trr Reverse Recovery Time VGS = -4 V, ISD = 40 A, VR = 800V dif/dt=700 A/µs TJ=175℃ -- 41 -- ns Qrr Reverse Recovery Charge -- 405 -- uC Package Dimensions (UNIT: MM): TO-247-4 |
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