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ACPDQC5V0ESPC-HF Scheda tecnica(PDF) 1 Page - Comchip Technology |
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ACPDQC5V0ESPC-HF Scheda tecnica(HTML) 1 Page - Comchip Technology |
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1 / 4 page ![]() ACPDQC5V0ESPC-HF RoHS Device Halogen Free Circuit Diagram Mechanical data - Case: 0402C/SOD-923F standard package, molded plastic. - Mounting position: Any. - Weight: 0.001 grams (approx.). - Terminals: Gold plated, solderable per MIL-STD-750, method 2026. SMD ESD Protection Diode Electrical Characteristics (at TA=25°C unless otherwise noted) Symbol Typ Parameter Min Max Unit Conditions Breakdown voltage VBR V IT = 1mA 7 Reverse leakage current IR nA VRWM = 5V 50 Clamping voltage VC V IPP = 1A, TP = 8/20µs IPP = 4A, TP = 8/20µs V Working peak reverse voltage VRWM 5 Dynamic resistance RDYN 9 1.3 <1 13 20 Clamping voltage VCL V IPP = 8A, TP = 100ns IPP = 16A, TP = 100ns 25 35 Junction capacitance CJ pF VR = 0V, f = 1MHz 0.35 0.28 15 25 High-Reliability and High-Performance Features - Bi-directional ESD protection. - Surface mount package. - Ultra small SMD package:0402C - High component density. - Low clamping voltage. - Low leakage. - IEC 61000-4-2 ESD protection up to ±25kV(Contact). - Ultra-Low capacitance: 0.28 pF(typ.) - AEC-Q101 Qualified. Dimensions in inches and (millimeter) 0402C/SOD-923F 0.022(0.55) 0.018(0.45) 0.001(0.02) Max. 0.041(1.05) 0.037(0.95) 0.026(0.65) BSC. 0.012(0.30) 0.008(0.20) 0.022(0.55) 0.018(0.45) 0.026(0.65) 0.022(0.55) Maximum Rating (at TA=25°C unless otherwise noted) Symbol Parameter Value Unit Conditions Peak pulse power PPP W 100 Operating temperature range Tj °C Storage temperature range TSTG -55~+150 °C ESD kV IEC 61000-4-2(air) IEC 61000-4-2(contact) ESD capability -40~+125 Peak pulse current IPP A TP = 8/20µs 4 TP = 8/20µs ±25 Comchip Technology CO., LTD. AQW-G7017 Page 1 REV:C |
Codice articolo simile - ACPDQC5V0ESPC-HF |
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Descrizione simile - ACPDQC5V0ESPC-HF |
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