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FP150R07N3E4 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited

Il numero della parte FP150R07N3E4
Spiegazioni elettronici  IGBT Modules
PDF  7 Pages
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Produttore elettronici  ISC [Inchange Semiconductor Company Limited]
Homepage  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

FP150R07N3E4 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited

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ISGM2047
eq FP150R07N3E4
IGBT Modules
www.iscsemi.com
2
Cies
Input Capacitance
VGE = 0V,
VCS = 25V,
f = 1.0MHz
-
10.2
-
nF
Cres
Reverse Transfer Capacitance
-
0.220
-
QG
Gate Charge
VGE= +15V...-15V
-
120
-
nC
TJ
Operating Junction Temperature
-40
-
150
℃
ISC
SC Data
VCC= 300V, VGE≤ 15V,
tp≤ 10us,TJ= 150℃
-
450
-
A
SWITCHING CHARACTERISTICS(TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
td(on)
Turn-on Delay Time
VGE = ±15V,
IC= 100A,
VCE = 300V,
RG= 8.2Ω
TJ= 25℃
L = 100 nH
-
126
-
ns
tr
Turn-on Rise Time
-
38
-
td(off)
Turn-off Delay Time
-
170
-
tf
Turn-off Fall Time
-
80
-
Eon
Turn-on switching losses
-
1.1
-
mJ
Eoff
Turn-off switching losses
-
2.2
-
DIODE, INVERTER
MAXIMUM RATED VALUES (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
VALUE
UNIT
VRRM
Repetitive Peak Reverse Voltage
650
V
IF
Diode Continuous Forward Current TC = 80 °C
150
A
IFRM
Repetitive Peak Forward Current @tp = 1 ms
300
A
ELECTRICAL CHARACTERIS
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
VF
Diode Forward Voltage
IF= 150A, TC=25℃
-
1.45
2.85
V
VF
Diode Forward Voltage
IF= 150A, TC=125℃
-
1.50
-
V
IRM
Peak Reverse recovery current
VR= 300V, IF= 150A,
-diF/dt=5300A/us,
VGE = 15 V
TJ= 25℃
-
150
-
A
Qrr
Reverse Recovery Charge
-
8.0
-
uC
Err
Reverse Recovery Energy
-
1.7
-
mJ



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