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IRF2805LPBF Scheda tecnica(PDF) 1 Page - International Rectifier |
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IRF2805LPBF Scheda tecnica(HTML) 1 Page - International Rectifier |
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1 / 11 page  Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 135 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 96 A IDM Pulsed Drain Current 700 PD @TC = 25°C Power Dissipation 200 W Linear Derating Factor 1.3 W/°C VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy 380 mJ EAS (6 sigma) Single Pulse Avalanche Energy Tested Value 1220 IAR Avalanche Current See Fig.12a, 12b, 15, 16 A EAR Repetitive Avalanche Energy mJ dv/dt Peak Diode Recovery dv/dt 2.0 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C HEXFET® Power MOSFET Absolute Maximum Ratings VDSS = 55V RDS(on) = 4.7mΩ ID = 135A 11/16/04 www.irf.com 1 AUTOMOTIVE MOSFET PD - 95944 HEXFET(R) is a registered trademark of International Rectifier. Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this product are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features com- bine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. S D G Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax Typical Applications l Climate Control l ABS l Electronic Braking l Windshield Wipers l Lead-Free IRF2805SPbF IRF2805LPbF D2Pak IRF2805SPbF TO-262 IRF2805LPbF Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Case ––– 0.75 RθJA Junction-to-Ambient(PCB Mounted, steady state)** ––– 40 °C/W |
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