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Motore di ricerca datesheet componenti elettronici |
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IRFIZ34VPBF Scheda tecnica(PDF) 1 Page - International Rectifier |
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IRFIZ34VPBF Scheda tecnica(HTML) 1 Page - International Rectifier |
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1 / 8 page  IRFIZ34VPbF HEXFET® Power MOSFET 11/13/03 Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 20 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 14 A IDM Pulsed Drain Current 120 PD @TC = 25°C Power Dissipation 30 W Linear Derating Factor 0.20 W/°C VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy
81 mJ IAR Avalanche Current 30 A EAR Repetitive Avalanche Energy 3.0 mJ dv/dt Peak Diode Recovery dv/dt
4.5 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m) Absolute Maximum Ratings Thermal Resistance www.irf.com 1 VDSS = 60V RDS(on) = 28mΩ ID = 20A S D G TO-220 Full-Pak Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing. l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications l Lead-Free Description PD - 94841 Parameter Typ. Max. Units RθJC Junction-to-Case ––– 5.0 RθJA Junction-to-Ambient ––– 65 °C/W |
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