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AS5SS128K36DQ-11/IT Scheda tecnica(PDF) 3 Page - Austin Semiconductor |
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AS5SS128K36DQ-11/IT Scheda tecnica(HTML) 3 Page - Austin Semiconductor |
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3 / 16 page ![]() SRAM AS5SS128K36 Austin Semiconductor, Inc. AS5SS128K36 Rev. 2.0 12/00 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 3 PIN DESCRIPTIONS (continued) TQFP PINS SYMBOL TYPE DESCRIPTION 64 ZZ Input Snooze Enable: This active HIGH, asynchronous input causes the device to enter a low-power standby mode in which all data in the memory array is retained. When ZZ is active, all other inputs are ignored. 89 CLK Input Clock: This signal registers the address, data, chip enables, byte write enables and burst control inputs on its rising edge. All synchronous inputs must meet setup and hold times around the clock's rising edge. 98, 92 CE\, CE2\ Input Synchronous Chip Enable: These active LOW inputs are used to enable the device and are sampled only when a new external address is loaded (ADV/LD\ LOW). CE2\ can be used for memory depth expansion. 97 CE2 Input Synchronous Enable: This active HIGH input is used to enable the device and is sampled only when a new external address is loaded (ADV/LD\ LOW). This input can be used for memory depth expansion. 86 OE\ (G\) Input Output Enable: This active LOW, asynchronous inputs enables the data I/O output drivers. G\ is the JEDEC-standard term for OE\. 85 ADV/LD\ Input Synchronous Address Advance/Load: When HIGH, this input is used to advance the internal burst counter, controlling burst access after the external address is loaded. When ADV/LD\ is HIGH, R/W\ is ignored. A LOW on ADV/LD\ clocks a new address at the CLK rising edge. 31 MODE (LBO\) Input Mode: This inputs selects the burst sequence. A LOW on this pin selects linear burst. NC or HIGH on this pin selects interleaved burst. Do not alter input state while device is operating. LBO\ is the JEDEC-standard term for MODE. (a) 51, 52, 53, 56-59, 62, 63 (b) 68, 69, 72-75, 78, 79, 80 (c)1, 2, 3, 6-9, 12, 13 (d) 18, 19, 22-25, 28, 29, 30 DQa DQb DQc DQd Input/Output SRAM Data I/Os: Byte "a" is DQa pins; Byte "b" is DQb pins; Byte "c" is DQc pins; Byte "d" is DQd pins. Input data must meet setup and hold times around the rising edge CLK. 15, 16, 41, 65, 91 VDD Supply Power Supply: See DC Electrical Characteristics and Operating Conditions for range. 5, 10, 14, 17, 21, 26 40, 55, 60, 66, 67, 71 76, 90 Vss Ground Ground: GND 4, 11, 20, 27, 54, 61 70, 77 VDDQ Supply Isolated Output Buffer Supply: See DC Electrical Characteristics and Operating Conditions for range. 38, 39, 42, 43, 83, 84 64 NC ---- No Connect: These pins can be left floating or connected to GND to minimize thermal impedance. 38, 39, 42, 43 DNU ---- Do Not Use: These signals may with be unconnected or wired to GND to minimize thermal impedance. 83, 84 NF ---- No Function: These pins are internally connected to the die and will have the capacitance of an input pin. It is allowable to leave these pins unconnected or driven by signals. Pins 83 and 84 are reserved for address expansion. |
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