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IRFP4568 Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IRFP4568 Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  ISF1108 eq IRFP4568 N-Channel MOSFET Transistor www.iscsemi.com 1 FEATURES · Drain Current -ID=171A@ TC=25℃ · Drain Source Voltage -VDSS=150V(Min) · Static Drain-Source On-Resistance -RDS(on) = 5.9mΩ(Max)@VGS= 10V APPLICATIONS · High Efficiency Synchronous Rectification in SMPS · Uninterruptible Power Supply · High Speed Power Switching · Hard Switched And High Frequency Circuits Absolute Maximum Ratings(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 150 V VGS Gate-Source Voltage ± 30 V ID Drain Current-Continuous 171 A IDM Drain Current-Single Pulsed 684 A PD Total Dissipation @TC=25℃ 517 W Tj Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(j-c) Channel-to-case thermal resistance 0.29 ℃ /W Rth(j-a) Channel-to-ambient thermal resistance 40 ℃ /W |
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