| Motore di ricerca datesheet componenti elettronici |
|
IXFR4N100Q Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited |
|
|
|||||||||||||||||||||||||||||
IXFR4N100Q Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited |
|
1 / 3 page ![]() ISF1116 eq IXFR4N100Q N-Channel MOSFET www.iscsemi.com 1 FEATURES · Drain Current -ID= 3.5A@ TC=25℃ · Drain Source Voltage -VDSS= 1000V(Min) · Static Drain-Source On-Resistance -RDS(on) = 3Ω(Max)@VGS= 10V APPLICATIONS · Switch Mode Power Supply (SMPS) · DC-DC converters · AC motor control · Battery chargers Absolute Maximum Ratings(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 1000 V VGS Gate-Source Voltage-Continuous ± 20 V ID Drain Current-Continuous 3.5 A IDM Drain Current-Single Pulse 16 A PD Total Dissipation @TC=25℃ 80 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.57 ℃ /W Isolated backside |
Codice articolo simile - IXFR4N100Q |
|
Descrizione simile - IXFR4N100Q |
|
|
|
Link URL |
| Lei ha avuto il aiuto da alldatasheet? [ DONATE ] |
Di alldatasheet | Richest di pubblicita | contatti | Privacy Policy | Collegamento alla scheda tecnica | scambio Link | Ricerca produttore All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |