Electrical Characteristics (TAmbient=25ºC unless noted otherwise)

Symbol

Parameters

Conditions

Min.

Typ.

Max. Unit

Off Characteristics

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, ID=250μA

-20

Volt

IDSS

Zero Gate Voltage Drain Current

VDS=-20V, VGS=0V

-1

μA

IGSS

Gate-Body Leakage Current

VGS=±10V, VDS=0V

±100

nA

On Characteristics(Note 3)

VGS(th)

Gate Threshold Voltage

VDS= VGS, ID=-250μA

-0.4

-0.62

-1.0

Volt

RDS(ON)

Drain-Source On-State Resistance

VGS=-4.5V, ID=-10A

11

19

mΩ

VGS=-2.5V, ID=-6.5A

14

22

mΩ

Dynamic Characteristics(Note 4)

Ciss

Input Capacitance

VDD=-15V, VGS=0V ,

F=1MHz

2992

pF

Coss

Output Capacitance

330

pF

Crss

Reverse Transfer Capacitance

272

pF

Switching Characteristics(Note 4)

td(on)

Turn-on Delay Time

VDD=-10V, ID=-6A

RGEN=2.5Ω

7

nS

tr

Turn-on Rise Time

33

nS

td(off)

Turn-Off Delay Time

130

nS

tf

Turn-Off Fall Time

132

nS

Qg

Total Gate Charge

VDS=-15V, ID=-9.1A,

VGS=-10V

72.8

nC

Qgs

Gate-Source Charge

6.6

nC

Qgd

Gate-Drain Charge

10.1

nC

Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. This test is performed with no heat sink at TA=25℃

3. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%

4. Guaranteed by design, not subject to production

FP2016Y

P-Channel Enhancement MOSFET