SCT840C datasheet(4/5 Pages) SMCDIODE

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Technical Data

Data Sheet N2039, Rev.A



China - Germany - Korea - Singapore - United States 



http://www.smc-diodes.com - sales@ smc-diodes.com 

SCT640C

SCT840C

FIG.3: Surge peak on-state current versus

number of cycles

FIG.1: Maximum power dissipation versus RMS

on-state current

FIG.4: On-state characteristics (maximum

values)

FIG.2: RMS on-state current versus case

temperature

IT(RMS) (A)

P(w)

IT(RMS) (A)

Tc (℃)

100

125

100

1000

Number of cycles

ITSM (A)

ITM (A)

VTM (V)

140

210

280

350

420

490

100

TO-220B(Non-Ins)

500

Tj=25℃

Tj=125℃

α=180°

One cycle

tp=10ms

FIG.6: Relative variations of gate trigger

current, holding current and latching current

versus junction temperature

FIG.5: Non-repetitive surge peak on-state current

for a sinusoidal pulse with width tp<10ms, and

corresponging value of I t (dI/dt < 50A/μs)

tp(ms)

0.01

0.1

ITSM (A), I t (A s)

-40 -20

80 100 120 140

IGT,IH,IL(Tj)/IGT,IH,IL(Tj=25℃)

0.0

0.5

1.5

2.0

3.0

1.0

2.5

Tj(℃)

IGT

1000

100

5000

I t2

ITSM

dI/dt

IH&IL

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