Silicon PNP Power Transistor

2SB1148

www.iscsemi.com

2

ELECTRICAL CHARACTERISTICS （TC=25℃ unless otherwise specified）

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNIT

V(BR)EBO

Emitter-Base Breakdown Voltage

IE=-1mA,IC=0

-7

--

--

V

V (BR)CEO

Collector-Emitter Breakdown Voltage

IC=-10mA, IB=0

-20

--

--

V

V(BR)CBO

Collector-Base Breakdown Voltage

IC=-1mA ,IE=0

-40

--

--

V

VCE(sat)

Collector-Emitter Saturation Voltage

IC= -10A; IB= -0.33A

--

--

-0.6

V

VBE(sat)

Base-Emitter Saturation Voltage

IC= -10A; IB= -0.33A

--

--

-1.5

V

ICBO

Collector Cutoff Current

VCB= -40V; IE= 0

--

--

-50

μ

A

IEBO

Emitter Cutoff Current

VEB= -5V; IC=0

--

--

-50

μ

A

hFE

DC Current Gain

IC= -0.1A; VCE= -2V

45

--

--

hFE

DC Current Gain

IC= -3A; VCE= -2V

90

--

260



hFE Classifications

Q

P

90-180

130-260

PRODUCT DISCLAIMER

ISC reserves the rights to make changes of the content herein the datasheet at any time without

notification. The information contained herein is presented only as a guide for the applications of our

products.

ISC products are intended for usage in general electronic equipment. The products are not designed for

use in equipment which require specialized quality and/or reliability, or in equipment which could have

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intend our products to be used in these special applications.

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