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IPB60R040C7 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited

Il numero della parte IPB60R040C7
Spiegazioni elettronici  N-Channel Super-JMOSFET
PDF  3 Pages
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Produttore elettronici  ISC [Inchange Semiconductor Company Limited]
Homepage  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

IPB60R040C7 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited

  IPB60R040C7 Datasheet HTML 1Page - Inchange Semiconductor Company Limited IPB60R040C7 Datasheet HTML 2Page - Inchange Semiconductor Company Limited IPB60R040C7 Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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ISF1149
eq IPB60R040C7
N-Channel Super-JMOSFET
www.iscsemi.com
2
ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
V(BR)DSS
Drain-Source Breakdown Voltage
VGS= 0, ID= 0.25mA
600
--
--
V
IDSS
Zero Gate Voltage Drain Current
VDS= 600V, VGS= 0V
--
--
1
uA
IGSS
Gate-Body Leakage Current
VGS= ±30V, VDS= 0V
--
--
±
100
nA
VGS(th)
Gate Threshold Voltage
VDS= VGS, ID= 0.25mA
2.5
--
4.5
V
RDS(on)
Drain-Source On-Resistance
VGS= 10V, ID= 25A
--
53
65
mΩ
RG
Gate Resistance
f = 1.0MHz
--
1.3
--
Ω
Ciss
Input Capacitance
VGS = 0V,
VDS = 400V,
f = 1.0MHz
--
3208
--
pF
Coss
Output Capacitance
--
81
--
Qg
Total Gate Charge
VDD = 400V,
ID = 25A,
VGS = 10V
--
75
--
nC
Qgs
Gate-Source Charge
--
17.2
--
Qgd
Gate-Drain Charge
--
34.5
--
td(on)
Turn-on Delay Time
VDD = 400V,
ID = 25A,
RG = 10Ω,
VGS = 10V
--
17
--
ns
tr
Turn-on Rise Time
--
8
--
td(off)
Turn-off Delay Time
--
71
--
tf
Turn-off Fall Time
--
9
--
Drain - Source Body Diode Characteristics
ISD
Continuous Source Current
Tc = 25 ºC
--
--
50
A
ISM
Pulsed Source Current
--
--
150
VSD
Diode Forward Voltage
ISD= 25A, VGS= 0V
--
--
1.2
V
trr
Reverse Recovery Time
VDD = 400V, IF = 25A,
diF/dt = 100A /μs
--
413
--
ns
Qrr
Reverse Recovery Charge
--
7.2
--
uC



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