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MJD44H11 Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited

Il numero della parte MJD44H11
Spiegazioni elettronici  isc Silicon NPN Power Transistors
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Produttore elettronici  ISC [Inchange Semiconductor Company Limited]
Homepage  http://www.iscsemi.cn
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MJD44H11 Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc Silicon NPN Power Transistors
MJD44H11
DESCRIPTION
·
Low Collector-Emitter Saturation Voltage
: VCE(sat)= 1.0V(Max)@ IC = 8A
·
Fast Switching Speeds
·
Complement to Type MJD45H11
·
DPAK for Surface Mount Applications
APPLICATIONS
·
Designed for general purpose power amplification and
switching such as output or driver stages in applications
such as switching regulators,converters and power amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
8
A
ICM
Collector Current-Peak
16
A
PC
Collector Power Dissipation
@TC=25℃
20
W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
6.25
℃
/W


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