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LTC7813 Scheda tecnica(PDF) 42 Page - Analog Devices

Il numero della parte LTC7813
Spiegazioni elettronici  100V VIN and VOUT Synchronous 4-Switch Multiphase Buck-Boost DC/DC Controller
PDF  59 Pages
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Produttore elettronici  AD [Analog Devices]
Homepage  http://www.analog.com
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Data Sheet
LT8210-1
analog.com
Rev. A
42 of 59
power dissipation for switches A, B, C, and D as a function of the input and output voltages and switching region. The
purpose is to guide MOSFET selection by determining where the majority of power is being dissipated. In the
following equations, ρτ is a normalization factor (unity at 25°C) accounting for the significant variation in on-
resistance with temperature, typically 0.4%/°C, as shown in Figure 67. For a maximum junction temperature of 125°C,
using a value of ρτ = 1.5 is reasonable. QSW is the switching charge and can be approximated as QSW = QGD + QGS/2 if not
explicitly stated in the MOSFET data sheet.
Figure 67. Normalized RDS(ON) vs. Temperature
The constant k is empirically derived to equal 1.3 and is a function of driver resistance, MOSFET threshold, and gate
resistance.
Switch A:
The power dissipation in switch A is due to both conduction and switching losses and typically reaches a maximum
at either VIN(MIN)in the boost region or VIN(MAX)in the buck region.
Table 6. Switch A Power Dissipation
REGION
POWER DISSIPATION
Buck
I OUT2 • (VOUT /VIN) • ρτ • RDS(ON) + k • IOUT • VIN • f SW • QSW
Buck-Boost
I OUT2 • (VOUT /VIN) • ρτ • RDS(ON) + k • IOUT • VIN • f SW • QSW
Boost
I OUT2 • (VOUT /VIN) 2 • ρτ • RDS(ON)
Pass-Thru (Non-Switching)
I OUT2 • ρτ • RDS(ON)
Switch B:
Switch B power dissipation is due mainly to conduction losses and reaches a maximum in the buck region at VIN(MAX).
Table 7. Switch B Power Dissipation
REGION
POWER DISSIPATION
Buck
IOUT2 • (1 - VOUT/VIN) • ρτ • RDS(ON)
Buck-Boost
IOUT 2 • (1 - VOUT/VIN) • ρτ • RDS(ON)
Boost
0
Pass-Thru (Non-Switching)
0
JUNCTION TEMPERATURE (°C)
–50
1.0
1.5
150
0.5
0
0
50
100
2.0



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