77 GHz GaAs SP3T PIN Diode Switch

MA4GC6774

V 2.00

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2

Parameters

Units

Minimum

Specification

Typical

Specification

Bias Conditions

Forward Voltage, +Vf

V

1.15

1.25

1.40

+10 mA per Diode

Leakage Current, -Ir

nA

-200

-20

-15 V per Diode

DC Slope Resistance

Ω

4.8

6.4

+10 mA & +11 mA per Diode

Maximum

Specification

MA4GC6774

Parameters

Conditions

Bias Condition

Comments

-5 V

+10 mA

Insertion Loss

(J1-J2)

(J1-J3)

(J1-J4)

-1.4 dB

-1.4 dB

-1.4 dB

B2

B3

B4

B3 & B4

B2 & B4

B2 & B3

RF Input Power = 0 dBm

Isolation

(J1-J2)

(J1-J3)

(J1-J4)

-24 dB

-24 dB

-24 dB

B3

B4

B3

B2 & B4

B2 & B3

B2 & B4

RF Input Power = 0 dBm

VSWR

(J1-J2)

(J1-J3)

(J1-J4)

-14 dB

-14 dB

-14 dB

B2

B3

B4

B3 & B4

B2 & B4

B2 & B3

RF Input Power = 0 dBm

Low Loss Condition Only

(Reflective in Isolation Mode)

Switching Speed

10% - 90%

RF Voltage

2 nS

0 to 5 V TTL

0 to 5 V TTL

Switching Speed is Driver Dependent

Avg.

DC to Millimeter Wave State Truth Table for the MA4GC6774

DC Bias Conditions

B2

B3

J1-J2

J1-J3

-5 Volts

+10 mA

Low Loss

Isolation

+10 mA

-5 Volts

Isolation

Low Loss

Millimeter Wave State

B4

+10 mA

+10 mA

+10 mA

+10 mA

-5 Volts

Isolation

Isolation

J1-J4

Isolation

Isolation

Low Loss