PLB16004U datasheet(4/12 Pages) PHILIPS

4 / 12 page

1997 Feb 18

Philips Semiconductors

Product speciﬁcation

Microwave power transistor

PLB16004U

THERMAL CHARACTERISTICS

Note

1. See

“Mounting recommendations in the General part of handbook SC19a”.

CHARACTERISTICS

Tmb =25 °C unless otherwise speciﬁed.

APPLICATION INFORMATION

Microwave performance up to Tmb =25 °C in a common-base test circuit as shown in Fig.3.

SYMBOL

PARAMETER

CONDITIONS

MAX.

UNIT

Rth j-mb

thermal resistance from junction to mounting base

Tj = 100 °C

K/W

Rth mb-h

thermal resistance from mounting base to heatsink note 1

0.3

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

ICES

collector cut-off current

RBE = 0; VCE =30V

−

200

µA

V(BR)CBO

collector-base breakdown voltage

IC = 1 mA; IE =0

−

V(BR)CES

collector-emitter breakdown voltage

IC = 1 mA; IE =0

−

V(BR)EBO

emitter-base breakdown voltage

IC = 1 mA; IE =0

−

hFE

DC current gain

IC = 300 mA; VCE = 5 V

100

MODE OF

OPERATION

(GHz)

VCC

(V)

(W)

(dB)

ηC

(%)

Zi; ZL

(

Ω)

Class C (CW)

1.6

typ. 5

typ. 10

typ. 50

see Figs 5 and 6

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