PLB16012U datasheet(4/12 Pages) PHILIPS

4 / 12 page

1997 Feb 18

Philips Semiconductors

Product speciﬁcation

NPN microwave power transistor

PLB16012U

THERMAL CHARACTERISTICS

Note

1. See

“Mounting recommendations in the General part of handbook SC19a”.

CHARACTERISTICS

Tmb =25 °C unless otherwise speciﬁed.

APPLICATION INFORMATION

Microwave performance up to Tmb =25 °C in a common base test circuit as shown in Fig.4 and working in CW

class C mode.

Note

1. May be used for narrowband or broadband amplifiers within the frequency range 1.4 to 1.8 GHz. Operation below

1.4 GHz may damage the transistor due to resonance of the internal output prematching circuit.

List of components (see Fig.4)

SYMBOL

PARAMETER

CONDITIONS

MAX.

UNIT

Rth j-mb

thermal resistance from junction to mounting base

Tj = 100 °C

K/W

Rth mb-h

thermal resistance from mounting base to heatsink note 1

0.3

K/W

SYMBOL

PARAMETER

CONDITIONS

MAX.

UNIT

ICBO

collector cut-off current

VCB = 28 V; IE = 0

0.3

VCB = 35 V; IE = 0

0.6

ICES

collector cut-off current

VCE = 28 V; RBE =0 Ω

0.6

IEBO

emitter cut-off current

VEB = 1.5 V; IC =0

µA

MODE OF

OPERATION

(GHz)

VCC

(V)

(W)

(dB)

(%)

Zi; ZL

(

Ω)

Class C (CW)

note 1

1.6

≥8

typ. 9.4

≥45

typ. 60

see Figs 5 and 6

Class C - 100 ms 50%

1.6

typ. 15

typ. 9.4

typ. 60

COMPONENT

DESCRIPTION

VALUE

DIMENSIONS

CATALOGUE NO.

L1, L2

5 turns 0.2 mm diameter copper wire

int. dia. = 2 mm

DC blocking capacitor

100 pF

feedthrough bypass capacitor

Erie, ref.1250-003

trimmer capacitor

0.6 - 4.5 pF

AT-3-7-271SL

electrolytic capacitor

150

µF, 45 V

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