MASWSS0118SMB datasheet(2/3 Pages) MACOM

2 / 3 page

GaAs SP4T 2.5 V High Power Switch

DC - 3.0 GHz

MASWSS0118

M/A-COM Inc. and its affiliates reserve the right to make changes to the

product(s) or information contained herein without notice. M/A-COM makes

no warranty, representation or guarantee regarding the suitability of its

products for any particular purpose, nor does M/A-COM assume any liability

whatsoever arising out of the use or application of any product(s) or

information.

• North America Tel: 800.366.2266 / Fax: 978.366.2266

• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300

• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

Visit www.macom.com for additional data sheets and product information.

Electrical Specifications: TA = 25°C, Z0 = 50 Ω

Parameter

Test Conditions

Units

Min.

Typ.

Max.

Insertion Loss 4

DC – 1 GHz

1 – 2 GHz

2 - 3 GHz

—

0.65

0.80

1.00

0.85

1.00

—

Isolation

DC – 1 GHz

1 – 2 GHz

2 - 3 GHz

—

29.0

23.0

18.5

—

Return Loss

DC – 3 GHz

—

IP3

Two Tone +26 dBm, 5 MHz Spacing, > 50 MHz

VC = 0 V / 2.5 V

dBm

—

P.1dB

VC = 0 V / 2.5 V

dBm

—

2nd Harmonic

1 GHz, PIN = +34 dBm, VC = 0 V / 2.5 V

dBc

—

-80

-71

3rd Harmonic

1 GHz, PIN = +34 dBm, VC = 0 V / 2.5 V

dBc

—

-68

-65

Trise, Tfall

10% RF to 90% RF, 90% to 10% RF, VC = 0 V / 2.5 V

µS

—

0.2

—

Ton, Toff

50% control to 90% RF, 50% control to 10% RF, VC = 0 V / 2.5 V

µS

—

0.2

—

Transients

—

Control Current

VC = 0 V / 2.5 V, 34 dBm

µA

—

IP2

Two Tone +26 dBm, 5 MHz Spacing, > 50 MHz

VC = 0 V / 2.5 V

dBm

—

3. External DC blocking capacitors are required on all RF ports.

4. Insertion Loss can be optimized by varying the DC blocking capacitor value, e.g. 1000 pF for 100 MHz - 500 MHz, 39 pF for 0.5 GHz - 3 GHz.

ANT-

RF1

ANT-

RF2

ANT-

RF3

ANT-

RF4

Off

Truth Table 7,8

7. Differential voltage, V (state 1) -V (state 2), must be 2.5 V

minimum.

8. 0 = -5 V to +2.5 V, 1 = -2.5 V to +5 V

Handling Procedures

Please observe the following precautions to avoid

damage:

Static Sensitivity

Gallium Arsenide Integrated Circuits are sensitive to

electrostatic discharge (ESD) and can be damaged by

static electricity. Proper ESD control techniques should

be used when handling these devices.

Parameter

Absolute Maximum

Input Power

(0.5 - 3.0 GHz, 2.5 V Control)

+38 dBm

Voltage

± 8.5 volts

Operating Temperature

-40°C to +85°C

Storage Temperature

-65°C to +150°C

Absolute Maximum Ratings 5,6

5. Exceeding any one or combination of these limits may cause

permanent damage to this device.

6. M/A-COM does not recommend sustained operation near

these survivability limits.

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