IRF7424TR datasheet(1/9 Pages) EVVOSEMI

Il numero della parte	IRF7424TR

Spiegazioni elettronici	P-Channel 30 V (D-S) MOSFET

PDF	9 Pages

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Produttore elettronici	EVVOSEMI [EVER SEMICONDUCTOR CO.,LIMITED]

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Parameter

Max.

Units

VDS

Drain- Source Voltage

-30

V

ID @ TA = 25°C

Continuous Drain Current, VGS @ -10V

-11

ID @ TA= 70°C

Continuous Drain Current, VGS @ -10V

-9.3

A

IDM

Pulsed Drain Current

-47

PD @TA = 25°C

Power Dissipation

2.5

PD @TA = 70°C

Power Dissipation

1.6

Linear Derating Factor

20

mW/°C

VGS

Gate-to-Source Voltage

± 20

V

TJ, TSTG

Junction and Storage Temperature Range

-55 to + 150

°C

Description

Parameter

Max.

Units

RθJA

Maximum Junction-to-Ambient

50

°C/W

Thermal Resistance

Absolute Maximum Ratings

W

Top View

8

1

2

3

4

5

6

7

D

G

S

A

D

S

VDSS

RDS(on) max (mW)

ID

-30V

13.5@VGS = -10V

-11A

22@VGS = -4.5V

-8.8A

Rev:2023A2

1

The SOP-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

multiple-die capability making it ideal in a variety of

power applications. With these improvements, multiple

devices can be used in an application with dramatically

reduced board space.

The package is designed for

vapor phase, infrared, or wave soldering technique

s

P-Channel 30 V (D-S) MOSFET

IRF7424

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IRF7424TR Scheda tecnica(PDF) 1 Page - EVER SEMICONDUCTOR CO.,LIMITED

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